vishay siliconix SIB911DK new product document number: 74475 s-80515-rev. b, 10-mar-08 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-75 package - small footprint area applications ? load switch, pa switch and battery switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.295 at v gs = - 4.5 v - 2.6 1.6 nc 0.420 at v gs = - 2.5 v - 2.2 0.560 at v gs = - 1.8 v - 1.9 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet powerpak sc75-6l-dual s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 1.60 mm 1.60 mm d 1 d 2 orderin g information: SIB911DK-t1-ge3 (lead (p b )-free and halogen-free) marking code x x x d a x lot traceability and date code part # code notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 s. c. see solder profile ( h ttp://www.vishay.com/ppg?73257 ). the powerpak sc-75 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. d. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. e. maximum under steady state conditions is 125 c/w. f. based on t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 2.6 a t c = 70 c - 2.1 t a = 25 c - 1.5 a, b t a = 70 c - 1.2 a, b pulsed drain current i dm - 5 continuous source-drain diode current t c = 25 c i s - 2.6 t a = 25 c - 0.9 a, b maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 1.1 a, b t a = 70 c 0.7 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, e t 5 s r thja 90 115 c/w maximum junction-to-case (drain) steady state r thjc 32 40 rohs compliant http://www..net/ datasheet pdf - http://www..net/
www.vishay.com 2 document number: 74475 s-80515-rev. b, 10-mar-08 vishay siliconix SIB911DK new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 19 mv/c v gs(th) temperature coefficient v gs(th) /t j 1.9 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 4.5 v 5a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 1.5 a 0.242 0.295 v gs = - 2.5 v, i d = - 1.2 a 0.345 0.420 v gs = - 1.8 v, i d = - 0.18 a 0.455 0.560 forward transconductance a g fs v ds = - 10 v, i d = - 1.5 a 3s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 115 pf output capacitance c oss 30 reverse transfer capacitance c rss 20 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 1.7 a 2.6 4.0 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 1.7 a 1.6 2.5 gate-source charge q gs 0.3 gate-drain charge q gd 0.5 gate resistance r g f = 1 mhz 7 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 7.1 i d ? - 1.4 a, v gen = - 4.5 v, r g = 1 12 20 ns rise time t r 45 70 turn-off delay time t d(off) 10 15 fall time t f 31 50 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 7.1 i d ? - 1.4 a, v gen = - 8 v, r g = 1 310 rise time t r 25 40 turn-off delay time t d(off) 10 15 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 2.6 a pulse diode forward current i sm 5 body diode voltage v sd i s = - 1.4 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 1.4 a, di/dt = 100 a/s, t j = 25 c 25 50 ns body diode reverse recovery charge q rr 26 50 nc reverse recovery fall time t a 19 ns reverse recovery rise time t b 6 http://www..net/ datasheet pdf - http://www..net/
document number: 74475 s-80515-rev. b, 10-mar-08 www.vishay.com 3 vishay siliconix SIB911DK new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 3.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 1 v 3 v 1.5 v 2 v 2.5 v 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 012345 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs = 1. 8 v v gs = 2.5 v v gs = 4.5 v 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d = 1.7 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 10 v v ds = 16 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 40 80 120 160 200 0 4 8 12 16 20 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v , 2.5 v , 1. 8 v ; i d = 1.5 a t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized) http://www..net/ datasheet pdf - http://www..net/
www.vishay.com 4 document number: 74475 s-80515-rev. b, 10-mar-08 vishay siliconix SIB911DK new product typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c 1 10 0.1 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 012345 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 1.5 a 125 c 25 c 0 2 4 6 8 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient - drain c u rrent (a) i d 10 0.1 0.1 1 10 100 1 t a = 25 c single p u lse 10 ms 100 ms dc 1 ms 100 s 0.01 r ds(on)* limited b y b v dss limited 1 s, 10 s i dm limited v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified http://www..net/ datasheet pdf - http://www..net/
document number: 74475 s-80515-rev. b, 10-mar-08 www.vishay.com 5 vishay siliconix SIB911DK new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature (c) power derating 0 1 2 3 4 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w) http://www..net/ datasheet pdf - http://www..net/
www.vishay.com 6 document number: 74475 s-80515-rev. b, 10-mar-08 vishay siliconix SIB911DK new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74475. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1000 10 1 10 -1 10 -4 100 0.2 0.1 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 100 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.05 0.02 single p u lse normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.2 0.1 0.05 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 1 0.1 single p u lse http://www..net/ datasheet pdf - http://www..net/
vishay siliconix package information document number: 73000 06-aug-07 www.vishay.com 1 powerpak ? sc75-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 d1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 d2 0.10 0.20 0.30 0.004 0.008 0.012 e 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 e1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 e2 0.20 0.25 0.30 0.008 0.010 0.012 e3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 bsc 0.020 bsc 0.50 bsc 0.020 bsc k 0.180 typ 0.007 typ 0.245 typ 0.010 typ k1 0.275 typ 0.011 typ 0.320 typ 0.013 typ k2 0.200 typ 0.008 typ 0.200 bsc 0.008 typ k3 0.255 typ 0.010 typ k4 0.300 typ 0.012 typ l 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 t 0.03 0.08 0.13 0.001 0.003 0.005 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5935 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting e b e b k1 k2 k 3 k2 k1 k2 k2 pin6 pin5 pin4 d1 d2 d1 d1 pin6 pin5 pin4 pin1 pin2 pin 3 detail z da a1 z z c e e1 e1 e1 k k k k4 l e2 pin2 pin1 pin 3 l e 3 http://www..net/ datasheet pdf - http://www..net/
application note 826 vishay siliconix document number: 70489 www.vishay.com revision: 28-oct-08 15 application note recommended pad layout for powerpak ? sc75-6l dual dimensions in mm/(inches) 1 (0,0) 0.25 (0.01) 0.375 (0.015) 0.5 (0.02) 0.32 (0.013) 0.44 (0.017) 0.61 (0.024) 0.25 (0.01) 1.6 (0.063) 1.25 (0.049) 2.2 (0.0 8 7) 2.2 (0.0 8 7) return to index http://www..net/ datasheet pdf - http://www..net/
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